(Ru).
On these surfaces the nanomeshes are very similar, as it can be seen in the following two STM images.
The left image (a) represents a nanomesh formed on Rh
Theoretical calculations showed that the differences in occupation degrees of
bonding and
antibonding
states can explain the non-formation of nanomesh on other
transition metals
like
nickel or
platinum.
Nanomeshes formed on
Rh and Ru are very similar, but some differences occur nevertheless.
From these images it is for example visible that defects occur more often on Ru than on
Rh,
what leads to deviations from the mesh periodicity. This may be explained by a stronger
interaction between the nanomesh and Ru in comparison to Rh.
The boron nitride nanomesh forms on single crystals and crystal films
The cost of
single crystals
is very high since the crystal has to be impurity
free and cutted as wanted. In addition the price of
Rh has tremendously increased
since 2002. In june 2007 it reached over 6'430 $/oz.
h-BN nanomesh can be prepared on Rh
(111) single crystals but also on
single-crystalline Rh films
with a typical thickness of 80-100
nm grown on Al
2O
3(
0001).
Nanomeshes prepared on both
substrate s are similar.
The details of
Rh film preparation will be published later.